PART |
Description |
Maker |
BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- |
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty LDMOS Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
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BLF8G27LS-150GV BLF8G27LS-150V |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF6G22LS-130 |
Power LDMOS transistor
|
NXP Semiconductors
|
L8821P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
L8801P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
LK822-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
LK802-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors
|
L2701-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|